Title :
Low-voltage indium-zinc-oxide thin film transistors gated by solution-processed chitosan-based proton conductors
Author :
Han, Xiao ; Jiang, Jie ; Zhou, Bin ; Sun, Jia ; Dou, Wei ; Liu, Huixuan ; Wan, Qing
Author_Institution :
Key Lab. for Micro-Nano Optoelectron. Devices of Minist. of Educ., Hunan Univ., Changsha, China
Abstract :
We fabricated indium-zinc-oxide (IZO) thin film transistors (TFT) gated by chitosan (CS) on ITO/glass substrate. Chitosan is demonstrated to be a new kind of solution-processed organic polymer electrolyte, which has nice film-forming characteristic. The chitosan thin film shows a large specific gate capacitance of 8.06 μF/cm2 due to the mobile-ions induced electric-double-layer effect. These devices exhibited a good performance with a small subthreshold swing of 0.3 V/dec, a large on-off current ratio of ~106, a high field-effect mobility of 1.24 cm2V-1 s-1 and a low operate voltage of 2 V. The solution-processed chitosan-based TFTs may have many potential applications for large-area, mechanically flexible, lightweight, and inexpensive electronic logic circuits.
Keywords :
conductors (electric); indium compounds; logic circuits; low-power electronics; polymer electrolytes; protons; thin film transistors; zinc compounds; CS; ITO-SiO2; InZnO-ITO-SiO2; electronic logic circuit; field-effect mobility; film-forming characteristic; gate capacitance; low-voltage TFT; low-voltage thin film transistor; mobile-ion induced electric-double-layer effect; on-off current ratio; solution-processed chitosan-based proton conductor; solution-processed organic polymer electrolyte; voltage 2 V; Capacitance; Chemicals; Dielectrics; Indium tin oxide; Logic gates; Polymers; Thin film transistors; Chitosan; low voltage; polymer dielectric material; solution-processed;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117692
