DocumentCode
2851175
Title
Modeling a microwave power transistor
Author
Harrison, Rob
Author_Institution
RCA Ltd., Montreal, Canada
Volume
XIV
fYear
1971
fDate
17-19 Feb. 1971
Firstpage
36
Lastpage
37
Abstract
Computer simulation of a 2-GHz, 1-W overlay transistor under realistic conditions has disclosed that simple models provide good results when impedances and package parasitics are properly characterized. Predicted and measured performance will be compared.
Keywords
Circuits; Coaxial components; Impedance measurement; Laboratories; Microwave transistors; Power amplifiers; Power measurement; Power transistors; Q measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1971.1154925
Filename
1154925
Link To Document