Comparison of multiple-polysilicon-nanowire pH-sensors coated with different ALD-deposited high-k dielectric materials

Author

Hsu, Po-Yen ; Wu, Chun-Yu ; Cheng, Huang-Chung ; Wu, You-Lin ; Chang, Wei-Tzu ; Shen, Yuan-Lin ; Chang, Che-Ming ; Wang, Chia-Chung ; Lin, Jing-Jenn

Author_Institution

Dept. of Electr. Eng., Nat. Chi Nan Univ., Nantou, Taiwan

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Multiple poly-silicon nanowires (PS-NW´s) coated with different high-k dielectric materials, HfO₂, Al₂O₃, and TiO₂, were fabricated and their pH sensing characteristics were compared. Sidewall spacer formation technique was used for the PS-NW´s fabrication and all the high-k materials were deposited by atomic-layer-deposition (ALD). Following the high-k dielectric deposition, a 3-aminopropyltriethoxysilane (y-APTES) layer was coated as sensing membrane. It is found that the multiple PS-NW sensor coated with HfO₂ exhibits the highest sensitivity and best reproducibility for pH sensing.

Keywords

atomic layer deposition; chemical sensors; dielectric materials; nanowires; pH measurement; 3-aminopropyltriethoxysilane; ALD-deposited high-k dielectric materials; atomic-layer-deposition; high-k dielectric deposition; multiple-polysilicon-nanowire pH-sensors; pH sensing characteristics; sensing membrane; sidewall spacer formation technique; Dielectrics; Fabrication; High K dielectric materials; Nanowires; Sensitivity; Sensors; Atomic-layer-deposition; FIB-processed C-AFM tip; high-k dielectric materials; multiple polysilicon nanowires; pH sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117700

Filename

6117700