Title :
Comparison of multiple-polysilicon-nanowire pH-sensors coated with different ALD-deposited high-k dielectric materials
Author :
Hsu, Po-Yen ; Wu, Chun-Yu ; Cheng, Huang-Chung ; Wu, You-Lin ; Chang, Wei-Tzu ; Shen, Yuan-Lin ; Chang, Che-Ming ; Wang, Chia-Chung ; Lin, Jing-Jenn
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Nantou, Taiwan
Abstract :
Multiple poly-silicon nanowires (PS-NW´s) coated with different high-k dielectric materials, HfO2, Al2O3, and TiO2, were fabricated and their pH sensing characteristics were compared. Sidewall spacer formation technique was used for the PS-NW´s fabrication and all the high-k materials were deposited by atomic-layer-deposition (ALD). Following the high-k dielectric deposition, a 3-aminopropyltriethoxysilane (y-APTES) layer was coated as sensing membrane. It is found that the multiple PS-NW sensor coated with HfO2 exhibits the highest sensitivity and best reproducibility for pH sensing.
Keywords :
atomic layer deposition; chemical sensors; dielectric materials; nanowires; pH measurement; 3-aminopropyltriethoxysilane; ALD-deposited high-k dielectric materials; atomic-layer-deposition; high-k dielectric deposition; multiple-polysilicon-nanowire pH-sensors; pH sensing characteristics; sensing membrane; sidewall spacer formation technique; Dielectrics; Fabrication; High K dielectric materials; Nanowires; Sensitivity; Sensors; Atomic-layer-deposition; FIB-processed C-AFM tip; high-k dielectric materials; multiple polysilicon nanowires; pH sensor;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117700