Title :
Dc characteristics of proton radiated SiGe power HBTs at cryogenic temperature
Author :
Qin, Guoxuan ; Jiang, Ningyue ; Ma, Jianguo ; Ma, Zhenqiang ; Ma, Pingxi ; Racanelli, Marco
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
The dc performances of proton irradiated silicon-germanium (SiGe) power heterojunction bipolar transistors (HBTs) at cryogenic temperature are reported in this work. Large emitter area high-power SiGe HBTs fabricated in a commercial BiCMOS process were irradiated with proton, at different fluences from 1×1012 p/cm2 to 5×1013 p/cm2. We show that proton radiated SiGe power HBTs are naturally suitable for electronic operations at cryogenic temperature. Specifically, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77K) indicates a significant potential for space applications. The results demonstrate the potential of SiGe power HBTs in power amplification for wireless applications under severe radiation and extreme temperature environment (cryogenic) even without any intentional radiation hardening.
Keywords :
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; power bipolar transistors; proton effects; radiation hardening (electronics); BiCMOS process; Dc characteristic; SiGe; SiGe power HBT; cryogenic temperature; liquid nitrogen temperature; power amplification; power heterojunction bipolar transistor; proton irradiated silicon-germanium; proton radiation; radiation hardening; wireless application; Cryogenics; Heterojunction bipolar transistors; Nitrogen; Protons; Silicon germanium; Temperature; Cryogenic temperature; SiGe power HBTs; dc characteristics; liquid nitrogen; proton radiation;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117703
