Effects of different Ar/O2 ratios on the electrical properties of CuPc-based TFTs with ZrO2 gate dielectric

Author

Tang, W.M. ; Greiner, M.T. ; Helander, M.G. ; Lu, Z.H. ; Ng, W.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

CuPc-based TFTs with high-k dielectric ZrO₂ as gate dielectric prepared by RF magnetron sputtering with various Ar/O₂ ratios have been fabricated. The effects of oxygen concentration in the sputtering ambient on the electrical performance of the devices are investigated. This work finds that increasing oxygen concentration in the sputtering ambient up to a Ar/O₂ ratio of 4:1 can improve the OTFT performance including the mobility, sub-threshold slope and on/off ratio. On the other hand, further increasing the Ar/O₂ ratio to 4:3 is found to degrade the device performance. This demonstrates that the electrical characteristics of the devices depend strongly on the oxygen concentration in the sputtering ambient. The origin of this phenomenon is discussed.

Keywords

argon; electric properties; high-k dielectric thin films; sputtering; thin film transistors; zirconium compounds; Ar-O₂; OTFT performance; RF magnetron sputtering; ZrO₂; electrical properties; gate dielectric; high-k dielectric; organic thin-film transistors; oxygen concentration; subthreshold slope; Argon; Dielectrics; Films; High K dielectric materials; Organic thin film transistors; Sputtering; CuPc; High-k dielectric ZrO2; OTFT;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117708

Filename

6117708