Title :
Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling
Author :
Ding, Chunbao ; Zhang, Wanrong ; Xie, Hongyun ; Chen, Liang ; Shen, Pei ; Zhang, Donghui ; Liu, Boyu ; Zhou, Yongqiang ; Guo, Zhengjie ; Lu, Zhiyi
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
A SiGe HBT low-noise amplifier (LNA) for UWB application is presented. According to the analysis for noise of common base transistor, noise canceling structure for SiGe HBT is proposed to reduce the noise arising from common transistor, thus reduce the noise of LNA. Meanwhile it also compensate the gain of the LNA, thus improves the gain flatness. The chip layout has been designed, its area is 0.56×0.53 mm2. The simulation results of the LNA demonstrate that in the range of UWB, the noise figure is reduced 2 dB compared with the case without noise canceling, the gain is 16.4~17.4, gain flatness is ±0.5dB, linearity is -6dBm.
Keywords :
heterojunction bipolar transistors; interference suppression; low noise amplifiers; silicon compounds; ultra wideband technology; HBT UWB low noise amplifier; HBT low-noise amplifier; LNA; SiGe; broadband noise canceling; chip layout; common base transistor; gain flatness; noise canceling structure; noise figure; noise reduction; Gain; Heterojunction bipolar transistors; Layout; Noise; Noise measurement; Silicon germanium; Low noise amplifier; Noise canceling; SiGe heterojunction bipolar transistor;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117714
