Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

Author

Xie, Gang ; Xu, Edward ; Lee, Junmin ; Hashemi, Niloufar ; Fu, Fred Y. ; Zhang, Bo ; Ng, W.T.

Author_Institution

Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

This paper presents a breakdown voltage enhancement technique for power AlGaN/GaN HEMTs by using novel Air-bridge Field Plate (AFP). The device features a metal field plate that jumps from the source over the gate region and lands between gate and drain. Simulation results show that the HEMTs with Air-bridge Field Plate can provide a new degree of freedom to modulate the device surface electric field. In a device with gate to drain distance of 6 μm, gate length of 0.8 μm, two times higher forward blocking voltage of 450 V was obtained at V_GS = -5 V when compared to a device with an optimized conventional field plate device (240 V) for a given process.

Keywords

aluminium compounds; electric fields; gallium compounds; high electron mobility transistors; AFP; AlGaN-GaN; air-bridge field plate; breakdown voltage enhancement; device surface electric field; metal field plate; power AlGaN/GaN HEMT; voltage 240 V; voltage 450 V; Aluminum gallium nitride; Electric fields; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon compounds; Air-bridge Field Plate; AlGaN/GaN HEMTs; Breakdown Voltage; Electric Field; GaN Power Devices; Gate to Source capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117720

Filename

6117720