CNTFET-based CMOS-like Gates and Dispersion of Characteristics

Author

Dang, T. ; Anghel, L. ; Pasca, V. ; Leveugle, R.

Author_Institution

CNRS, Grenoble

fYear

2007

fDate

16-18 Dec. 2007

Firstpage

151

Lastpage

156

Abstract

This paper deals with the analysis of characteristic dispersions of CMOS-like logic gates (NOT, NAND2, NOR2) based on carbon nanotube transistors. The analysis is based on available compact models and uses a specific tool. We have simulated and analyzed the impact of diameter variations on the static and dynamic characteristics of gates, especially logic switching threshold voltage and propagation time. An important conclusion is that small variations of nanotube diameters seriously impact these characteristics. We have established the relationships between the thresholds or propagation times and the nanotube diameters. Our work is a first step towards parametric fault modeling for logic circuits based on CNTFETs.

Keywords

CMOS logic circuits; carbon nanotubes; field effect transistors; CMOS-like logic gates; CNT field-effect transistors; CNTFET-based CMOS-like gates; NAND2; NOR2; NOT; carbon nanotube transistors; characteristics dispersion; logic circuits; logic switching threshold voltage; nanotube diameters; parametric fault modeling; propagation time; Analytical models; Carbon nanotubes; Circuit faults; FETs; Laboratories; Logic circuits; Logic devices; Logic gates; MOSFETs; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Test Workshop, 2007. IDT 2007. 2nd International

Conference_Location

Cairo

Print_ISBN

978-1-4244-1824-4

Electronic_ISBN

978-1-4244-1825-1

Type

conf

DOI

10.1109/IDT.2007.4437449

Filename

4437449