Evaluation of quasi-ballistic transport in nano-MOSFETs by deterministic solver of the time dependent multi-subbands Boltzmann Transport Equation

Author

Wang, Yong ; Lu, Tiao ; Liu, Xiaoyan ; Du, Gang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

In this paper, the ballistic and quasi-ballistic transport characteristics of Sub-30 nm double gate MOSFETs are simulated by deterministic solver of the Time Dependent Muti-subbands Boltzmann Transport Equation [1]. The scattering effect on the Sub-30 nm double gate MOSFETs is investigated not only through analyzing ON current, but also the source to channel barrier height, average electron velocity and electron density at virtual source (VS: top of the barrier).

Keywords

Boltzmann equation; MOSFET; nanoelectronics; average electron velocity; channel barrier height; deterministic solver; double gate MOSFET; electron density; nano-MOSFET; quasi-ballistic transport characteristics; scattering effect; time dependent multisubbands Boltzmann transport equation; virtual source; Boltzmann equation; Educational institutions; Logic gates; MOSFETs; Mathematical model; Scattering; Boltzmann Transport Equation; Quasi-ballistic transport; Virtual Source;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117726

Filename

6117726