Title :
A 3.0-6.5 GHz YIG-tuned transistor oscillator/amplifier
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
The availability of new microwave transistors with an fma, in excess of 11 GHz makes it feasible to design oscillator/amplifiers in the C-Band. region. The accurate highfrequency characterization of those transistors by their scattering matrix and the use of optimization methods account for best performance. High-Q single crystal ferrimagnetic garnets provide linear tuning and broadband coverage. Finally, hybrid thin-film techniques on high dielectric sapphire substrate keep the parasitic at a minimum and account for an optimum blend of the various elements.
Keywords :
Circuit optimization; Dielectric substrates; Dielectric thin films; Equations; Microwave oscillators; Microwave transistors; Power amplifiers; Resonant frequency; Saturation magnetization; Thin film circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154952
