• DocumentCode
    285180
  • Title

    High-capacity discrete exponential BAM

  • Author

    Wang, Chua-Chin ; Don, Hon-Son

  • Author_Institution
    Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA
  • Volume
    2
  • fYear
    1992
  • fDate
    7-11 Jun 1992
  • Firstpage
    178
  • Abstract
    A bidirectional associative memory (BAM) with high capacity for storage of pattern pairs is proposed. The associative memory takes advantage of the exponential nonlinearity in the evolution equations such that the signal-noise-ratio (SNR) is significantly increased. The increase of SNR consequently enhances the capacity of the BAM. An energy function is defined. The energy of the exponential BAM decreases as the recall process proceeds, ensuring the stability of the system. The monotonic decrease of the energy of the exponential BAM during the recall process ensures it will reach a local minimum
  • Keywords
    content-addressable storage; energy function; exponential nonlinearity; high speed discrete exponential bidirectional associative memory; pattern pairs storage; recall process; signal-noise-ratio; Associative memory; Autocorrelation; Bismuth; Hamming distance; Magnesium compounds; Nonlinear equations; Reverberation; Stability; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Neural Networks, 1992. IJCNN., International Joint Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    0-7803-0559-0
  • Type

    conf

  • DOI
    10.1109/IJCNN.1992.227011
  • Filename
    227011