Title :
A memory system based on surface-charge transport
Author :
Engeler, W. ; Tiemann, J. ; Baertsch, R.
Author_Institution :
General Electric Co., Schenectady, NY, USA
Abstract :
A charge transport structure, superior to arrays utilizing three-phase clocking, wherein adjacent rows propagate in opposite directions, has been combined with compact refresh-turnaround circuits to produce a shift register memory system of high density and speed.
Keywords :
Charge transfer; Clocks; Electrodes; Electron devices; Frequency; Pins; Reservoirs; Shift registers; Tail; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154965
