Title :
Carrier transport in charge-coupled devices
Author_Institution :
Fairchild Research and Development Lab., Palo Alto, CA, USA
Abstract :
The transfer characteristics of charge-coupled devices have been studied by considering the transport of carriers at Si-SiO2interface. Good agreement between theory and experiment has been achieved by adjusting the surface mobility alone.
Keywords :
Boundary conditions; Electrodes; Equations; Laboratories; MOS capacitors; Potential well; Research and development; Substrates; Surface charging; Surface discharges;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154967
