• DocumentCode
    2851929
  • Title

    Carrier transport in charge-coupled devices

  • Author

    C.-K.Kim

  • Author_Institution
    Fairchild Research and Development Lab., Palo Alto, CA, USA
  • Volume
    XIV
  • fYear
    1971
  • fDate
    17-19 Feb. 1971
  • Firstpage
    158
  • Lastpage
    159
  • Abstract
    The transfer characteristics of charge-coupled devices have been studied by considering the transport of carriers at Si-SiO2interface. Good agreement between theory and experiment has been achieved by adjusting the surface mobility alone.
  • Keywords
    Boundary conditions; Electrodes; Equations; Laboratories; MOS capacitors; Potential well; Research and development; Substrates; Surface charging; Surface discharges;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1971.1154967
  • Filename
    1154967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2851929