Title :
Reconfigurable Threshold Logic Gates using memristive devices
Author :
Thanh Tran ; Rothenbuhler, Adrian ; Smith, E.H.B. ; Saxena, Vishal ; Campbell, Kristy A.
Author_Institution :
Electr. & Comput. Eng. Dept., Boise State Univ., Boise, ID, USA
Abstract :
We present our early design exploration of reconfigurable Threshold Logic Gates (TLG) implemented using Silver-chalcogenide memristive devices combined with CMOS circuits. A variety of linearly separable logic functions including AND, OR, NAND, NOR have been realized in a Matlab-Simulink/Cadence co-simulation using a single-layer TLG. The functionality can be changed between these operations by reprogramming the resistance of the memristive devices.
Keywords :
CMOS integrated circuits; NAND circuits; NOR circuits; logic design; logic gates; memristors; silver compounds; threshold logic; CMOS circuit; NAND; NOR; TLG; linearly separable logic function; reconfigurable threshold logic gates; silver-chalcogenide memristive device; CMOS integrated circuits; Integrated circuit modeling; Logic gates; Memristors; Programming; Resistance; Threshold voltage; memristors; threshold logic circuits;
Conference_Titel :
Subthreshold Microelectronics Conference (SubVT), 2012 IEEE
Conference_Location :
Waltham, MA
Print_ISBN :
978-1-4673-1586-9
DOI :
10.1109/SubVT.2012.6404301
