Title :
High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate
Author :
Li, Shaojuan ; Han, Dedong ; Sun, Lei ; Wang, Yi ; Han, Quqi ; Zhang, Shengdong
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
We present the construction and characteristics of high-performance ZnO thin-film transistors (TFTs) on the glass substrate. The ZnO films were deposited as channel layers under oxygen rich ambience by reactive sputtering at room temperature. Typical transfer characteristics of the ZnO TFTs with different channel thicknesses were demonstrated and analyzed. Results show that the threshold voltage exhibited obvious negative shift with the increase of the channel thickness. The sub-threshold swing and off-state current were improved for the case of thinner active channel layer.
Keywords :
sputtering; substrates; thin film transistors; zinc compounds; ZnO; channel thickness; glass substrate; high performance reactive sputtering deposited ZnO thin-film transistors; high-performance ZnO thin-film transistors; off-state current; oxygen rich ambience; sub-threshold swing; threshold voltage; transfer characteristics; transparent substrate; Optical diffraction; Optical films; Sputtering; Substrates; Thin film transistors; Zinc oxide; ZnO film; reactive RF sputtering; thin-film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117749
