High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

Author

Li, Shaojuan ; Han, Dedong ; Sun, Lei ; Wang, Yi ; Han, Quqi ; Zhang, Shengdong

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

We present the construction and characteristics of high-performance ZnO thin-film transistors (TFTs) on the glass substrate. The ZnO films were deposited as channel layers under oxygen rich ambience by reactive sputtering at room temperature. Typical transfer characteristics of the ZnO TFTs with different channel thicknesses were demonstrated and analyzed. Results show that the threshold voltage exhibited obvious negative shift with the increase of the channel thickness. The sub-threshold swing and off-state current were improved for the case of thinner active channel layer.

Keywords

sputtering; substrates; thin film transistors; zinc compounds; ZnO; channel thickness; glass substrate; high performance reactive sputtering deposited ZnO thin-film transistors; high-performance ZnO thin-film transistors; off-state current; oxygen rich ambience; sub-threshold swing; threshold voltage; transfer characteristics; transparent substrate; Optical diffraction; Optical films; Sputtering; Substrates; Thin film transistors; Zinc oxide; ZnO film; reactive RF sputtering; thin-film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117749

Filename

6117749