Title :
A fully-decoded 2048-bit electrically-programmable MOS ROM
Author :
Frohman-Bentchkowsky, D.
Author_Institution :
Intel Corp., Mountain View, CA, USA
Abstract :
A novel MOS charge storage transistor developed for an electrically-programmable ROM will be described. The memory element is a fully-decoded 2048-bit silicon gate MOS chip that provides access times of 500 ns (dynamic mode) or 800 ns (static mode).
Keywords :
Application software; Computer applications; Decoding; Dielectric substrates; FETs; Magnetic memory; Nonvolatile memory; Read only memory; Semiconductor memory; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154978
