DocumentCode :
2852135
Title :
Efficient modeling of single event transients directly in compact device models
Author :
Francis, A.M. ; Turowski, M. ; Holmes, J.A. ; Mantooth, H.A.
Author_Institution :
Univ. of Arkansas, Fayetteville
fYear :
2007
fDate :
20-21 Sept. 2007
Firstpage :
73
Lastpage :
77
Abstract :
With decreasing feature size, analysis of circuits for radiation strike vulnerability is becoming very important in a many applications. Classical modeling methods may be not sufficient to reproduce single event transients observed in deep-submicron, fast ICs. A novel approach for development and efficient inclusion of such effects directly in compact device models is described.
Keywords :
CMOS integrated circuits; integrated circuit design; pulse generators; IC device; compact device models; radiation strike vulnerability; single event transients; Analytical models; Boundary conditions; CMOS technology; Circuit analysis; Circuit simulation; Computational fluid dynamics; Computational modeling; Ionizing radiation; SPICE; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-1567-0
Type :
conf
DOI :
10.1109/BMAS.2007.4437528
Filename :
4437528
Link To Document :
بازگشت