DocumentCode
2852135
Title
Efficient modeling of single event transients directly in compact device models
Author
Francis, A.M. ; Turowski, M. ; Holmes, J.A. ; Mantooth, H.A.
Author_Institution
Univ. of Arkansas, Fayetteville
fYear
2007
fDate
20-21 Sept. 2007
Firstpage
73
Lastpage
77
Abstract
With decreasing feature size, analysis of circuits for radiation strike vulnerability is becoming very important in a many applications. Classical modeling methods may be not sufficient to reproduce single event transients observed in deep-submicron, fast ICs. A novel approach for development and efficient inclusion of such effects directly in compact device models is described.
Keywords
CMOS integrated circuits; integrated circuit design; pulse generators; IC device; compact device models; radiation strike vulnerability; single event transients; Analytical models; Boundary conditions; CMOS technology; Circuit analysis; Circuit simulation; Computational fluid dynamics; Computational modeling; Ionizing radiation; SPICE; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-1567-0
Type
conf
DOI
10.1109/BMAS.2007.4437528
Filename
4437528
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