• DocumentCode
    2852233
  • Title

    A fixed-address memory cell with normall-off-type schottky-barrier FETs

  • Author

    Drangeid, K. ; Broom, R. ; Jutzi, W. ; Mohr, Th. ; Moser, A. ; Sasso, Grazia

  • Author_Institution
    IBM research Lab., Rüschlikon, Switzerland
  • Volume
    XIV
  • fYear
    1971
  • fDate
    17-19 Feb. 1971
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    An integrated memory cell fabricated with normally-off MESFET devices will be described. A 1-μ channel length and contact separation provide high packing density (∼2.5 mil2/cell) and high speed. Supply voltage is below 1V.
  • Keywords
    Circuits; Doping; FETs; MESFETs; Microwave transistors; Ohmic contacts; Resistors; Schottky diodes; Semiconductor diodes; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1971.1154985
  • Filename
    1154985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852233