• DocumentCode
    2852236
  • Title

    Power and frequency characteristics of Gunn-diodes on the basis of GaN

  • Author

    Arkusha, Yu V. ; Prokhorov, E.D. ; Storozhenko, I.P.

  • Author_Institution
    V. N. Karazin Kharkov Nat. Univ., Ukraine
  • Volume
    1
  • fYear
    2005
  • fDate
    12-16 Oct. 2005
  • Firstpage
    166
  • Abstract
    The results of researches of power and frequency characteristics for Gunn-diode on the basis of GaN with different active length with dipole domain and accumulation layers is presented. It is possible to obtain generation using such diodes in submillimeter range.
  • Keywords
    Gunn diodes; III-V semiconductors; gallium compounds; wide band gap semiconductors; GaN; Gunn-diodes; frequency characteristics; power characteristics; Diodes; Frequency; Gallium arsenide; Gallium nitride; IEEE catalog; Microwave technology; Organizing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
  • Print_ISBN
    966-7968-80-4
  • Type

    conf

  • DOI
    10.1109/CRMICO.2005.1564853
  • Filename
    1564853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852236