Title :
Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices
Author :
Hefner, Allen ; Ryu, Sei-Hyung ; Hull, Brett ; Berning, David ; Hood, Colleen ; Ortiz-Rodriguez, Jose M. ; Rivera-Lopez, Angel ; Duong, Tam ; Akuffo, Adwoa ; Hernandez-Mora, Madelaine
Author_Institution :
National Inst. of Stand. & Technol., Gaithersburg, MD
Abstract :
The emergence of high-voltage, high-frequency (HV-HF) silicon-carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA wide bandgap semiconductor technology (WEST) high power electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed
Keywords :
carbon compounds; military systems; power conversion; power distribution; power semiconductor devices; silicon compounds; wide band gap semiconductors; DARPA; HV-HF devices; SiC; high power electronics; high-frequency power devices; high-voltage power devices; military power distribution; power conversion systems; power semiconductor technology; silicon-carbide; wide bandgap semiconductor technology; Fabrication; Measurement; NIST; Power distribution; Power electronics; Power semiconductor devices; Semiconductor device packaging; Semiconductor materials; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256542
