Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices

Author

Hefner, Allen ; Ryu, Sei-Hyung ; Hull, Brett ; Berning, David ; Hood, Colleen ; Ortiz-Rodriguez, Jose M. ; Rivera-Lopez, Angel ; Duong, Tam ; Akuffo, Adwoa ; Hernandez-Mora, Madelaine

Author_Institution

National Inst. of Stand. & Technol., Gaithersburg, MD

Volume

1

fYear

2006

fDate

8-12 Oct. 2006

Firstpage

330

Lastpage

337

Abstract

The emergence of high-voltage, high-frequency (HV-HF) silicon-carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA wide bandgap semiconductor technology (WEST) high power electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed

Keywords

carbon compounds; military systems; power conversion; power distribution; power semiconductor devices; silicon compounds; wide band gap semiconductors; DARPA; HV-HF devices; SiC; high power electronics; high-frequency power devices; high-voltage power devices; military power distribution; power conversion systems; power semiconductor technology; silicon-carbide; wide bandgap semiconductor technology; Fabrication; Measurement; NIST; Power distribution; Power electronics; Power semiconductor devices; Semiconductor device packaging; Semiconductor materials; Silicon carbide; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE

Conference_Location

Tampa, FL

ISSN

0197-2618

Print_ISBN

1-4244-0364-2

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/IAS.2006.256542

Filename

4025227