• DocumentCode
    2852371
  • Title

    Phase change memory modeling using Verilog-A

  • Author

    Liao, Yi-Bo ; Chen, Yan-Kai ; Chiang, Meng-Hsueh

  • Author_Institution
    Department of Electronic, Engineering, National Ilan University, Taiwan, China
  • fYear
    2007
  • fDate
    20-21 Sept. 2007
  • Firstpage
    159
  • Lastpage
    164
  • Abstract
    In this paper, we successfully develop a compact phase change memory (PCM) model using Verilog-A. As PCM has shown its potential for next generation memory device, a predictive, yet simple-to-use circuit model is crucial to the development. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used, as compared with conventional modeling schemes.
  • Keywords
    Amorphous materials; Circuits; Crystallization; Dynamic programming; Hardware design languages; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-4244-1567-0
  • Type

    conf

  • DOI
    10.1109/BMAS.2007.4437544
  • Filename
    4437544