DocumentCode
2852371
Title
Phase change memory modeling using Verilog-A
Author
Liao, Yi-Bo ; Chen, Yan-Kai ; Chiang, Meng-Hsueh
Author_Institution
Department of Electronic, Engineering, National Ilan University, Taiwan, China
fYear
2007
fDate
20-21 Sept. 2007
Firstpage
159
Lastpage
164
Abstract
In this paper, we successfully develop a compact phase change memory (PCM) model using Verilog-A. As PCM has shown its potential for next generation memory device, a predictive, yet simple-to-use circuit model is crucial to the development. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used, as compared with conventional modeling schemes.
Keywords
Amorphous materials; Circuits; Crystallization; Dynamic programming; Hardware design languages; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-4244-1567-0
Type
conf
DOI
10.1109/BMAS.2007.4437544
Filename
4437544
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