Title :
Design improvement of L-shaped tunneling field-effect transistors
Author :
Sang Wan Kim ; Woo Young Choi ; Min-Chul Sun ; Hyun Woo Kim ; Byung-Gook Park
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Inter-Univ. Semicond. Res. Center (ISRC), Seoul, South Korea
Abstract :
L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (Ion) and lower subthreshold swing (SS) than conventional L-shaped TFETs.
Keywords :
MOSFET; semiconductor doping; tunnel transistors; L-shaped TFET; L-shaped tunneling field-effect transistor design; doping concentration; lower subthreshold swing; n-type doped tunneling regions; on-off transition; Doping; Educational institutions; Logic gates; Photonic band gap; Silicon; Transistors; Tunneling; TFET; steep slope; subthreshold swing;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404373
