Title :
Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors
Author :
Doria, R.T. ; Trevisoli, R.D. ; de Souza, M. ; Ferain, I. ; Das, S. ; Pavanello, Marcelo Antonio
Author_Institution :
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This work presented an experimental analysis of the LFN in p and n-type JNTs of different L and doping concentrations. JNTs have shown 1/f noise as the main noise component, which has been associated to CNF in nMOS and MF in the pMOS. Also, SId reduced with the rise of the doping concentration and with the raise of L.
Keywords :
1/f noise; MOSFET; doping profiles; nanoelectronics; nanowires; semiconductor device noise; semiconductor doping; 1/f noise; LFN; doping concentrations; low-frequency noise; n-type JNT; nMOS short channel junctionless nanowire transistors; noise component; p-type JNT; pMOS short channel junctionless nanowire transistors; Doping; Logic gates; MOSFETs; Noise; Silicon;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404379
