• DocumentCode
    2853031
  • Title

    The role of the incomplete ionization on the operation of Junctionless Nanowire Transistors

  • Author

    Trevisoli, R.D. ; Doria, R.T. ; de Souza, M. ; Ferain, I. ; Das, S. ; Pavanello, Marcelo Antonio

  • Author_Institution
    PSI, LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work presented an evaluation of the zero temperature coefficient bias in Junctionless Nanowire Transistors. Contrarily to results of previous works, this paper shows that JNTs can present a ZTC point, which depends on the series resistance and its dependence on the temperature.
  • Keywords
    MOSFET; nanoelectronics; nanowires; JNT; MOSFET; ZTC point; junctionless nanowire transistors; series resistance; zero temperature coefficient bias; Doping; Ionization; Logic gates; MOS devices; Resistance; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404384
  • Filename
    6404384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2853031