DocumentCode
2853047
Title
Optimized CMOS-SOI process for high performance RF switches
Author
Joshi, A.B. ; Lee, Sang-Rim ; Chen, Y.Y. ; Lee, T.Y.
Author_Institution
Skyworks Solutions, Inc., Irvine, CA, USA
fYear
2012
fDate
1-4 Oct. 2012
Firstpage
1
Lastpage
2
Abstract
In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in wireless applications. Since such applications can involve switching high power levels (35 dBm) at high frequencies (~2 GHz), the technology considerations are substantially different than those for SOI used in high speed, small signal applications such as microprocessors. This paper provides an overview of key technology challenges and trade-offs.
Keywords
CMOS integrated circuits; field effect MMIC; microwave switches; silicon-on-insulator; Si; high performance RF switches; microprocessors; optimized CMOS-SOI process; silicon-on-insulator; Antennas; Linearity; Optimization; Radio frequency; Substrates; Switches; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2012 IEEE International
Conference_Location
NAPA, CA
ISSN
1078-621X
Print_ISBN
978-1-4673-2690-2
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2012.6404385
Filename
6404385
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