Title :
Experimental demonstration of A2RAM memory cell on SOI
Author :
Rodriguez, N. ; Navarro, C. ; Gamiz, Francisco ; Andrieu, F. ; Faynot, O. ; Cristoloveanu, S.
Author_Institution :
Nanoelectron. Res. Group, Univ. of Granada, Granada, Spain
Abstract :
The A2RAM memory cell has been fabricated and its operation demonstrated experimentally for the first time. The retrograde P-N channel doping allows the separation of electrons and holes in very thin films. We have documented attractive performance in terms of current margin, retention time, variability and cell disturbance immunity without any additional source/drain implantation optimization compared to logic transistor integration.
Keywords :
random-access storage; semiconductor doping; semiconductor thin films; silicon-on-insulator; A2RAM memory cell; P-N channel doping; SOI; current margin; disturbance immunity; logic transistor integration; retention time; thin films; Doping profiles; Films; Logic gates; Performance evaluation; Transistors; Writing;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404392
