Title :
Transient selection gates using breakdown
Author_Institution :
Bell Telephone Labs., Inc., Murray Hill, N.J., USA
Abstract :
A class of low-power transient gate circuits suitable for memory selection will be described. Charge storage and junction breakdown are utilized so that nonoverlapping pulses as narrow as 1 ns may be used without dc bias.
Keywords :
Breakdown voltage; Capacitance; Diodes; Electric breakdown; Impedance; Laboratories; Power dissipation; Pulse amplifiers; Pulse circuits; Telephony;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155040
