Title :
GaN HEMTs on silicon for power devices
Author :
Escoffier, R. ; TORRES, ABEL ; Fayolle-Lecocq, M. ; Buj-Dufournet, C. ; Morvan, E. ; Charles, Michael ; Poisson, M.A.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
In order to develop high voltage high current and high temperature HEMT transistors, we have studied an isolated gate based on a thin Al2O3. TCAD simulations have been used to explain abnormal C(V) results depending on the density and localization of positive charges under the gate. We have found and explained the dependence between degradation of Al2O3 interface and electrical characteristics.
Keywords :
III-V semiconductors; alumina; elemental semiconductors; gallium compounds; power HEMT; silicon; wide band gap semiconductors; Al2O3; GaN; HEMT; Si; TCAD simulations; electrical characteristics; high temperature HEMT transistors; high voltage high current HEMT transistors; isolated gate; positive charge localization; power devices; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon; Substrates;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404398
