• DocumentCode
    2853201
  • Title

    GaN HEMTs on silicon for power devices

  • Author

    Escoffier, R. ; TORRES, ABEL ; Fayolle-Lecocq, M. ; Buj-Dufournet, C. ; Morvan, E. ; Charles, Michael ; Poisson, M.A.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In order to develop high voltage high current and high temperature HEMT transistors, we have studied an isolated gate based on a thin Al2O3. TCAD simulations have been used to explain abnormal C(V) results depending on the density and localization of positive charges under the gate. We have found and explained the dependence between degradation of Al2O3 interface and electrical characteristics.
  • Keywords
    III-V semiconductors; alumina; elemental semiconductors; gallium compounds; power HEMT; silicon; wide band gap semiconductors; Al2O3; GaN; HEMT; Si; TCAD simulations; electrical characteristics; high temperature HEMT transistors; high voltage high current HEMT transistors; isolated gate; positive charge localization; power devices; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404398
  • Filename
    6404398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2853201