DocumentCode
2853279
Title
Charge pump random-access memory
Author
Burke, H. ; Michon, G.
Author_Institution
General Electric Co., Schenectady, N.Y., USA
Volume
XV
fYear
1972
fDate
16-18 Feb. 1972
Firstpage
16
Lastpage
17
Abstract
A new MOS memory cell concept replacing load resistors with charge pumping devices will be discussed. Access time of 50 ns and 100-nW/bit standby power has been achieved for a 1024-bit array. Standard MOS processing is used.
Keywords
Charge pumps; Delay effects; Electric resistance; Frequency; MOSFETs; Parasitic capacitance; Resistors; Silicon; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1972.1155050
Filename
1155050
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