Title :
Charge pump random-access memory
Author :
Burke, H. ; Michon, G.
Author_Institution :
General Electric Co., Schenectady, N.Y., USA
Abstract :
A new MOS memory cell concept replacing load resistors with charge pumping devices will be discussed. Access time of 50 ns and 100-nW/bit standby power has been achieved for a 1024-bit array. Standard MOS processing is used.
Keywords :
Charge pumps; Delay effects; Electric resistance; Frequency; MOSFETs; Parasitic capacitance; Resistors; Silicon; Testing; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155050
