Title :
Nonvolatile, electrically-alterable MAOS memory
Author :
Sato, Seiki ; Yamaguchi, Toru ; Aoki, Toyohiro
Author_Institution :
Sony Corp., Kanagawa, Japan
Abstract :
An N-channel field-effect memory transistor using a metal alumina-oxide-semiconductor type structure has been developed. Memory is nonvolatile, electrically programmable, electrically alterable and nondestructively readout, and holds stored date indefinitely.
Keywords :
Chemicals; Circuits; Decoding; FETs; Insulation; Nonvolatile memory; Read only memory; Read-write memory; Silicon compounds; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155053
