Title :
SEMINET: further advances in integrated device/circuit simulation for power electronics
Author :
Van Dell, W.R. ; Kyle, W.K.
Author_Institution :
General Electric Co., Research Triangle Park, NC, USA
Abstract :
SEMINET, a power circuit simulator with an integral device simulator, is reviewed, and enhancements are described. Development and simulation of a dynamic insulated-gate-transistor (IGT) model using SEMINET is discussed, and insights into IGT behavior during turn-off are presented. Simulation of an IGT-based half-bridge circuit is described, and the large-signal transient behavior and interaction of the IGT and flyback diode are examined.<>
Keywords :
circuit analysis computing; insulated gate field effect transistors; semiconductor device models; SEMINET; dynamic insulated-gate-transistor; flyback diode; half-bridge circuit; integrated device/circuit simulation; large-signal transient behavior; power electronics; semiconductor device models; Analytical models; Circuit simulation; Equations; Physics; Power system modeling; Power system simulation; Semiconductor devices; Signal design; Time domain analysis; Transient analysis;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18117
