DocumentCode
2853624
Title
SEMINET: further advances in integrated device/circuit simulation for power electronics
Author
Van Dell, W.R. ; Kyle, W.K.
Author_Institution
General Electric Co., Research Triangle Park, NC, USA
fYear
1988
fDate
11-14 April 1988
Firstpage
69
Abstract
SEMINET, a power circuit simulator with an integral device simulator, is reviewed, and enhancements are described. Development and simulation of a dynamic insulated-gate-transistor (IGT) model using SEMINET is discussed, and insights into IGT behavior during turn-off are presented. Simulation of an IGT-based half-bridge circuit is described, and the large-signal transient behavior and interaction of the IGT and flyback diode are examined.<>
Keywords
circuit analysis computing; insulated gate field effect transistors; semiconductor device models; SEMINET; dynamic insulated-gate-transistor; flyback diode; half-bridge circuit; integrated device/circuit simulation; large-signal transient behavior; power electronics; semiconductor device models; Analytical models; Circuit simulation; Equations; Physics; Power system modeling; Power system simulation; Semiconductor devices; Signal design; Time domain analysis; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/PESC.1988.18117
Filename
18117
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