Mismatch of current sources and accuracy of D/A converters in 0.5 μm GaAs/GaAlAs HEMT technology

Author

Feng, Shen ; Sauerer, Josef ; Seitzer, Dieter

Author_Institution

Fraunhofer-Inst. for Integrated Circuits, Erlangen, Germany

Volume

1

fYear

1992

fDate

10-13 May 1992

Firstpage

224

Abstract

GaAs/GaAlAs HEMT current source mismatch and digital-to-analog converter (DAC) accuracy are analyzed and measured. Using a semiempirical model and experimental data, the mismatches in devices and current sources are predicted and shown to agree with measurements. The accuracies of three kinds of weighted networks for high-speed and high-precision DACs are also analyzed in the cases of mismatching in the current sources and resistors. An 8-bit DAC has been implemented in a 0.5-μm HEMT technology, and its measured accuracy is verified to be identical to the prediction

Keywords

III-V semiconductors; aluminium compounds; constant current sources; digital-analogue conversion; field effect integrated circuits; gallium arsenide; high electron mobility transistors; 0.5 micron; D/A converters; DAC accuracy; GaAs-GaAlAs; HEMT technology; current source mismatch; device mismatch; experimental data; high-speed DACs; semiconductors; semiempirical model; weighted networks; Current measurement; FETs; Gallium arsenide; HEMTs; Integrated circuit measurements; Integrated circuit technology; Predictive models; Resistors; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.229973

Filename

229973