Title :
Modeling the linear and nonlinear behavior of gallium arsenide p-i-n diode control circuits
Author :
Caverly, Robert H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Dartmouth, MA, USA
Abstract :
A model describing the linear and nonlinear behavior of GaAs p-i-n diodes that includes the effects of the highly anisotropic i-region carrier mobilities is presented. A Volterra series approach is used in the analysis. The nth-order transfer functions of the forward biased p-i-n diode are evaluated to the third order. These transfer functions are used in computing the first-order impedance of the device and the second- and third-order distortion intercept points. Experimental measurements show good agreement with the theoretical calculations, verifying the approach used in the model
Keywords :
III-V semiconductors; gallium arsenide; p-i-n diodes; semiconductor device models; semiconductor switches; GaAs; Volterra series approach; anisotropic i-region carrier mobilities; first-order impedance; nonlinear behavior; p-i-n diode control circuits; second-order distortion intercept points; semiconductors; third order; third-order distortion intercept points; Circuits; Conductivity; Gallium arsenide; Impedance; P-i-n diodes; Radio frequency; Semiconductor diodes; Silicon; Switches; Transfer functions;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.229978
