Modeling the linear and nonlinear behavior of gallium arsenide p-i-n diode control circuits

Author

Caverly, Robert H.

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Dartmouth, MA, USA

Volume

1

fYear

1992

fDate

10-13 May 1992

Firstpage

204

Abstract

A model describing the linear and nonlinear behavior of GaAs p-i-n diodes that includes the effects of the highly anisotropic i-region carrier mobilities is presented. A Volterra series approach is used in the analysis. The nth-order transfer functions of the forward biased p-i-n diode are evaluated to the third order. These transfer functions are used in computing the first-order impedance of the device and the second- and third-order distortion intercept points. Experimental measurements show good agreement with the theoretical calculations, verifying the approach used in the model

Keywords

III-V semiconductors; gallium arsenide; p-i-n diodes; semiconductor device models; semiconductor switches; GaAs; Volterra series approach; anisotropic i-region carrier mobilities; first-order impedance; nonlinear behavior; p-i-n diode control circuits; second-order distortion intercept points; semiconductors; third order; third-order distortion intercept points; Circuits; Conductivity; Gallium arsenide; Impedance; P-i-n diodes; Radio frequency; Semiconductor diodes; Silicon; Switches; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.229978

Filename

229978