• DocumentCode
    2853898
  • Title

    Theoretical comparison of N+PP+and P+NN+silicon IMPATT diodes

  • Author

    Ward, Aaron ; Udelson, B.

  • Author_Institution
    Harry Diamond Laboratories, Washington, D.C., USA
  • Volume
    XV
  • fYear
    1972
  • fDate
    16-18 Feb. 1972
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    This paper will present the results of a computer simulation of N+PP+and P+NN+IMPATT Diodes. Saturation effects will be described. Significant efficiency improvement is predicted for the N+PP+structure; 20.1 versus 13.9%.
  • Keywords
    Computational modeling; Computer simulation; Current density; Laboratories; Oscillators; Pulse measurements; Radio frequency; Semiconductor diodes; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1972.1155089
  • Filename
    1155089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2853898