Title :
Theoretical comparison of N+PP+and P+NN+silicon IMPATT diodes
Author :
Ward, Aaron ; Udelson, B.
Author_Institution :
Harry Diamond Laboratories, Washington, D.C., USA
Abstract :
This paper will present the results of a computer simulation of N+PP+and P+NN+IMPATT Diodes. Saturation effects will be described. Significant efficiency improvement is predicted for the N+PP+structure; 20.1 versus 13.9%.
Keywords :
Computational modeling; Computer simulation; Current density; Laboratories; Oscillators; Pulse measurements; Radio frequency; Semiconductor diodes; Silicon; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155089
