Title :
GaAs microwave Schottky-gate FET
Author :
Liechti, C. ; Gowen, E. ; Cohen, Johanne
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
A GaAs FET transistor with 0.9μm Schottky barrier gate that exhibits an extrapolated maximum frequency of oscillation of 40 GHz has been developed. Coupling of the transistor to coplanar waveguides has been accomplished with negligible parasitic reactances.
Keywords :
Coplanar waveguides; Electrons; Fixtures; Frequency; Gain measurement; Gallium arsenide; Microwave FETs; Scattering parameters; Substrates; Waveguide transitions;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155100
