Title :
Characteristics, applications and challenges of SiC power devices for future power electronic system
Author :
Zhao, Bin ; Qin, Haihong ; Wen, Jiaopu ; Yan, Yangguang
Author_Institution :
Jiangsu Key Laboratory of New Energy Generation and Power Conversion, Nanjing University of Aeronautics and Astronautics, China
Abstract :
Today, there is an increasing demand for high frequency, high power and high temperature applications where the converters will operate in a harsh environment. Switching devices based on Silicon Carbide (SiC) offer a significant performance improvement on the switch level compared with Si devices. This paper describes the current state of the art in SiC devices briefly. Then the research and development of applying SiC devices in military and industrial applications are given respectively. And challenges regarding broader implementation of SiC devices today are emphasized. Finally, a short outlook into the future for upcoming SiC power devices is given.
Keywords :
Inverters; Schottky diodes; Silicon; Silicon carbide; Switches; JFETs; SiC semiconductor; high temperature; power density;
Conference_Titel :
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location :
Harbin, China
Print_ISBN :
978-1-4577-2085-7
DOI :
10.1109/IPEMC.2012.6258833