DocumentCode
2854157
Title
X- and Ku-band amplifiers with GaAs Schottky-barrier FETS
Author
Baechtold, W.
Author_Institution
IBM Zurich Research Laboratory, Rüschlikon, Switzerland
Volume
XV
fYear
1972
fDate
16-18 Feb. 1972
Firstpage
156
Lastpage
157
Abstract
This paper will report on two low-power FET amplifiers: 8.2 GHz with 17.5-dB gain and 1.3-GHz bandwidth; 9.5-14.3 GHz with 8.5-dB gain.
Keywords
Circuit noise; Dielectric constant; Frequency; Gallium arsenide; Laboratories; Low-noise amplifiers; Microwave FETs; Microwave amplifiers; Noise figure; Stripline;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1972.1155105
Filename
1155105
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