DocumentCode
2854204
Title
Experimental research on temperature dynamics of SiC JFET
Author
Guo, Qing ; He, Junwei ; Wang, Tao ; Sheng, Kuang
Author_Institution
College of Electrical Engineering, Zhejiang University Hangzhou, China
Volume
1
fYear
2012
fDate
2-5 June 2012
Firstpage
233
Lastpage
237
Abstract
In this paper, junction temperature behavior of Silicon Carbide (SiC) JFET is investigated both in room temperature and high ambient temperature. The mechanism of thermal runaway of commercially available SiC JFET device is analyzed. The experimental results reveal reduced risk of thermal runaway under high ambient temperature for SiC JFET devices.
Keywords
JFETs; Junctions; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; Thermal resistance; JFET; Silicon Carbide; junction temperature; temperature Dynamic;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location
Harbin, China
Print_ISBN
978-1-4577-2085-7
Type
conf
DOI
10.1109/IPEMC.2012.6258836
Filename
6258836
Link To Document