Title :
Experimental research on temperature dynamics of SiC JFET
Author :
Guo, Qing ; He, Junwei ; Wang, Tao ; Sheng, Kuang
Author_Institution :
College of Electrical Engineering, Zhejiang University Hangzhou, China
Abstract :
In this paper, junction temperature behavior of Silicon Carbide (SiC) JFET is investigated both in room temperature and high ambient temperature. The mechanism of thermal runaway of commercially available SiC JFET device is analyzed. The experimental results reveal reduced risk of thermal runaway under high ambient temperature for SiC JFET devices.
Keywords :
JFETs; Junctions; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; Thermal resistance; JFET; Silicon Carbide; junction temperature; temperature Dynamic;
Conference_Titel :
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location :
Harbin, China
Print_ISBN :
978-1-4577-2085-7
DOI :
10.1109/IPEMC.2012.6258836
