DocumentCode
2854416
Title
A new micropower complementary bipolar transistor structure
Author
Su, S. ; Meindl, J.
Author_Institution
Stanford University, Stanford, CA, USA
Volume
XV
fYear
1972
fDate
16-18 Feb. 1972
Firstpage
194
Lastpage
195
Abstract
A micropower complementary monolithic bipolar transistor structure with relatively simple processing steps has been developed. High current gains, very low saturation voltages and high sheet resistances are inherent characteristics of the structure.
Keywords
Bipolar transistors; Blood flow; Circuits; Delta modulation; Fluid flow measurement; Logic gates; Low voltage; Resistors; Robustness; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1972.1155117
Filename
1155117
Link To Document