DocumentCode
2854421
Title
Comparison of different nonlinear models applied in submicron gate length 5 W transistor of R&PC /spl Lt/ISTOK/spl Gt/
Author
Klimova, A.V. ; Korolev, A.N. ; Krasnik, V.A. ; Manchenko, L.V. ; Pchelin, V.A.
Author_Institution
Fed. State Unitary Corp. R&PC, Moscow
Volume
2
fYear
2005
fDate
16-16 Sept. 2005
Firstpage
474
Abstract
For the submicrometer gate field effect transistor developed in R&PC "lstok" yielding 5 W output power in two and three centimeter wave length band, comparison of different nonlinear models, which are common for main system of MIS design has been carried out. It is found that being properly corrected, all models provided satisfactory agreement between calculated and experimental data in spite of apparent limitations peculiar to the models
Keywords
MISFET; 5 W; MIS design; metal-insulator-semiconductor device; nonlinear model; submicrometer gate field effect transistor; Gallium arsenide; Helium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-80-4
Type
conf
DOI
10.1109/CRMICO.2005.1564997
Filename
1564997
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