Estimation of deep levels effect on recovery time of low noise amplifiers under power pulse

Typical depths and rechargeable times for deep levels in low noise field effect transistors under the power pulse depending on f transistor parameters, pulse amplitude, electron capture cross-section have been estimated. Based on this estimations and experimental date, including measured noise figure and associated gain of typical transistors, the parasitical buffer layer conductance effect on performance of low noise amplifier with bipolar power supply and unipolar power supply has been analyzed. It is shown that noise figure of amplifier under power pulse can be increased twice for bipolar power supply and tree times for unipolar power supply