Title :
Monolithic varactor tuned RF amplifier IC using ion implantation
Author :
Manchester, K. ; MacDougall, Jonathan ; Tkal, O. ; Chu, T.
Author_Institution :
Sprague Electric Co., North Adams, MA, USA
Abstract :
Ion implantation has been used in the fabrication of components for a varactor-tuned RF amplifier IC having a gain of over 20 dB and tunable from 50-76 MHz. Amplifier consists of a varactor, resistor and dual-gate MOSFET devices on a 48 × 60-mil chip.
Keywords :
Ion implantation; MOSFET circuits; Monolithic integrated circuits; Radiofrequency amplifiers; Radiofrequency integrated circuits; Resistors; Threshold voltage; Transconductance; VHF circuits; Varactors;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155139
