Title :
Design and applications of 2-6.5 GHz transistor amplifiers
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
The design of 2-6.5 GHz transistor pre-and power-amplifiers with 1-dB gain compression points of 11 and 14 dBm, respectively, and their applications in C-band test instruments will be presented.
Keywords :
Circuits; Frequency; Gain; Microwave oscillators; Microwave transistors; Power amplifiers; Power generation; Power measurement; Preamplifiers; Scattering parameters;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155142
