DocumentCode
2854814
Title
Design and applications of 2-6.5 GHz transistor amplifiers
Author
Chen, Peng
Author_Institution
Hewlett-Packard Co., Palo Alto, CA, USA
Volume
XVI
fYear
1973
fDate
14-16 Feb. 1973
Firstpage
76
Lastpage
77
Abstract
The design of 2-6.5 GHz transistor pre-and power-amplifiers with 1-dB gain compression points of 11 and 14 dBm, respectively, and their applications in C-band test instruments will be presented.
Keywords
Circuits; Frequency; Gain; Microwave oscillators; Microwave transistors; Power amplifiers; Power generation; Power measurement; Preamplifiers; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1973.1155142
Filename
1155142
Link To Document