A 20 GHz compact scalable model of silicon-based on-chip spiral inductor for RFICS

In this paper, a new scalable compact high-frequency Si-based on-chip spiral inductor model is presented that consists of a new substrate network and underpass oxide leakage component to model the reduction in equivalent series resistance at higher frequencies. The model accurately estimates the equivalent circuit parameters over a wide frequency range. The proposed model has been verified with the measured results of octagonal spiral inductors fabricated on a six-metal BiCMOS7 process. The model gives excellent fit when compared with the measured data within 10% across different inductor geometries over the frequency range up to 20 GHz. An evolutionary-based particle swarm optimization (PSO) algorithm is used for the extraction of model parameters that speeds up the convergence and overcomes the sub-optimal solution of conventional optimization algorithm by fitting Y-parameter, inductance and Q values simultaneously