DocumentCode
2854995
Title
Excess noise in stable and injection-locked IMPATT diode amplifiers at high-power levels
Author
Thaler, H.-J.
Author_Institution
Siemens AG, Munich, Germany
Volume
XVI
fYear
1973
fDate
14-16 Feb. 1973
Firstpage
116
Lastpage
117
Abstract
The mechanisms responsible for the excess noise in IMPATT diode power amplifiers have been investigated. The stable amplifier has been found to have a lower effective noise figure than an injection-locked oscillator with the same output power.
Keywords
Diodes; Frequency modulation; High power amplifiers; Impedance; Low-frequency noise; Noise figure; Noise level; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1973.1155155
Filename
1155155
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