Title :
Physical Modeling and Parameter Extraction Procedure for p-i-n Diodes with Lifetime Control
Author :
Lu, L. ; Bryant, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC
Abstract :
A physics-based model for diodes with lifetime control has been recently proposed. The model is an extension of a diode model that uses a Fourier series solution for the ambipolar diffusion equation in the drift region. In this paper a parameter extraction procedure for the diode with lifetime control is proposed. The procedure requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite element simulations. The physics-based model using the parameters so extracted shows excellent agreement with experimental results
Keywords :
finite element analysis; p-i-n diodes; power semiconductor diodes; semiconductor device models; Fourier series; ambipolar diffusion equation; finite element simulations; lifetime control; p-i-n diodes model; parameter extraction procedure; physical modeling; Equations; Finite element methods; Fourier series; P-i-n diodes; Parameter extraction; Power semiconductor switches; Predictive models; Semiconductor diodes; Switching converters; Switching loss; Power semiconductor modeling; lifetime control; physics-based model; pin diode model; variable lifetime;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256721
