Physics-Based Model of IGBT Including MOS Side Two-Dimensional Effects

Author

Lu, L. ; Bryant, A. ; Santi, E. ; Hudgins, J.L. ; Palmer, P.R.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC

Volume

3

fYear

2006

fDate

8-12 Oct. 2006

Firstpage

1457

Lastpage

1464

Abstract

An existing physics-based model, which has proven accurate for inductive turn-off and inductive turn-on simulations, is modified to account for lateral-gate IGBT two-dimensional effects at the MOS end of the drift region. The modification is based on a steady-state solution of carrier distribution in the JFET region of the IGBT. The accuracy of this solution is verified through a set of finite-element simulations. The improved accuracy of the modified model in terms of on-state forward drop and voltage tail at turn-on is verified through comparison with experimental results

Keywords

finite element analysis; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; IGBT models; JFET region; MOS side 2D effects; carrier distribution; finite-element simulations; physics based model; Anodes; Cathodes; Charge carrier density; Charge carrier processes; Electron emission; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Predictive models; Threshold voltage; IGBT model; Power semiconductor modeling; physics-based model;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE

Conference_Location

Tampa, FL

ISSN

0197-2618

Print_ISBN

1-4244-0364-2

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/IAS.2006.256722

Filename

4025409