Title :
SOA in High Power Semiconductors
Author_Institution :
ABB Switzerland Ltd., Lenzburg
Abstract :
This paper gives an overview on the SOA of high power semiconductors. Two main types of high power semiconductors are investigated: large area devices and modules with paralleled chips. The paper explains the limits of SOA and ways of improving it in the semiconductor design level, as well as it gives practical advantages for a high SOA in the device
Keywords :
high-voltage techniques; insulated gate bipolar transistors; semiconductor device breakdown; thyristors; IGBT; IGCT; SOA; high power semiconductors; safe operating area; semiconductor design level; Clamps; Degradation; Design optimization; Inductance; Insulated gate bipolar transistors; Low voltage; Medium voltage; Power system protection; Semiconductor optical amplifiers; Thyristors; IGBT; IGCT; SOA; Safe Operating Area; component; high power semiconductor;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256724
