DocumentCode
2855167
Title
SOA in High Power Semiconductors
Author
Akdag, Alper
Author_Institution
ABB Switzerland Ltd., Lenzburg
Volume
3
fYear
2006
fDate
8-12 Oct. 2006
Firstpage
1473
Lastpage
1477
Abstract
This paper gives an overview on the SOA of high power semiconductors. Two main types of high power semiconductors are investigated: large area devices and modules with paralleled chips. The paper explains the limits of SOA and ways of improving it in the semiconductor design level, as well as it gives practical advantages for a high SOA in the device
Keywords
high-voltage techniques; insulated gate bipolar transistors; semiconductor device breakdown; thyristors; IGBT; IGCT; SOA; high power semiconductors; safe operating area; semiconductor design level; Clamps; Degradation; Design optimization; Inductance; Insulated gate bipolar transistors; Low voltage; Medium voltage; Power system protection; Semiconductor optical amplifiers; Thyristors; IGBT; IGCT; SOA; Safe Operating Area; component; high power semiconductor;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location
Tampa, FL
ISSN
0197-2618
Print_ISBN
1-4244-0364-2
Electronic_ISBN
0197-2618
Type
conf
DOI
10.1109/IAS.2006.256724
Filename
4025411
Link To Document