DocumentCode

2855186

Title

Mesh source type microwave power FET

Author

Fukuta, Masahiro ; Mimura, Takashi ; Tujimura, I. ; Furumoto, A. ; Dazai, K.

Author_Institution

Fujitsu, Ltd., IC Design Division, Kobe, Japan

Volume

XVI

fYear

1973

fDate

14-16 Feb. 1973

Firstpage

84

Lastpage

85

Keywords

Assembly; Current-voltage characteristics; Epitaxial layers; Etching; Frequency; Gallium arsenide; Microwave FETs; Power generation; Shape; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1973.1155168

Filename

1155168