DocumentCode :
2855257
Title :
Subnanosecond PCM of GaAs lasers by Gunn-effect switches
Author :
Thim, H. ; Dawson, L. ; Dilorenzo, J. ; Dyment, J. ; Hwang, Chang-Sing ; Rode, D.
Author_Institution :
Bell Laboratories, Inc., Murray Hill, NJ, USA
Volume :
XVI
fYear :
1973
fDate :
14-16 Feb. 1973
Firstpage :
92
Lastpage :
93
Abstract :
Pulse-code amplitude modulation of GaAs double hetero junction lasers has been achieved at subnanosecond rates by series connecting laser diodes with bistable Gunn-effect switches. Laser-intensity risetimes down to 200 ps and falltimes to 400 ps have been obtained when pulse-code switching occurs between high and low phasing levels.
Keywords :
Coaxial cables; Diode lasers; Gallium arsenide; Gunn devices; Infrared detectors; Laser theory; Phase change materials; Pulse modulation; Switches; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1973.1155171
Filename :
1155171
Link To Document :
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